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TO-252Tip Power Transistors 3DD13002 Transistor NPN

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

TO-252Tip Power Transistors 3DD13002 Transistor NPN

Country/Region china
City & Province shenzhen guangdong
Categories Chargers
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Product Details

TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN)

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector -Base Voltage600V
VCEOCollector-Emitter Voltage400V
VEBOEmitter-Base Voltage6V
ICCollector Current -Continuous1A
PCCollector Power Dissipation1.25W
TJJunction Temperature150
TstgStorage Temperature-55~150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100μA,IE=0600  V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA,IB=0400  V
Emitter-base breakdown voltageV(BR)EBOIE= 100μA,IC=06  V

 

Collector cut-off current

ICBOVCB= 600V,IE=0  100µA
 ICEOVCB= 400V,IE=0  100µA
Emitter cut-off currentIEBOVEB= 7V, IC=0  100µA

 

Dc current gain

hFE1VCE= 10 V, IC= 200mA9 40 
 hFE2VCE= 10 V, IC= 0.25mA5   
Collector-emitter saturation voltageVCE(sat)IC=200mA, IB= 40mA  0.5V
Base-emitter saturation voltageVBE(sat)IC=200mA, IB= 40mA  1.1V

 

Transition frequency

 

fT

VCE=10V, IC=100mA

f =1MHz

 

5

  

 

MHz

Fall timetfIC=1A, IB1=-IB2=0.2A VCC=100V  0.5µs
Storage timets   2.5µs

 

 

CLASSIFICATION OF hFE1

Range9-1515-2020-2525-3030-3535-40

 

 


Typical Characteristics

 

 
 

 

TO-92 Package Outline Dimensions

 

SymbolDimensions In MillimetersDimensions In Inches
 Min.Max.Min.Max.
A2.2002.4000.0870.094
A11.0501.3500.0420.054
B1.3501.6500.0530.065
b0.5000.7000.0200.028
b10.7000.9000.0280.035
c0.4300.5800.0170.023
c10.4300.5800.0170.023
D6.3506.6500.2500.262
D15.2005.4000.2050.213
E5.4005.7000.2130.224
e2.300 TYP.0.091 TYP.
e14.5004.7000.1770.185
L7.5007.9000.2950.311

 

 

 

 

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