Home Companies Shenzhen Hua Xuan Yang Electronics Co.,Ltd

FR101 THRU FR107 Fast Rectifier Diode , Ultra Fast Recovery Diode

Active Member

Contact Us

[China]

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

FR101 THRU FR107 Fast Rectifier Diode , Ultra Fast Recovery Diode

Country/Region	china
City & Province	shenzhen guangdong
Categories	Generator Parts & Accessories

Product Details

FR101 THRU FR107 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Amper

FEATURE

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Fast switching for high efficiency

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Note:

1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounte

RATINGS AND CHARACTERISTIC CURVES 1N4942 THRU 1N4948

Hot Products

HXY4409 30V P-Channel MOSFET

HXY4409 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on ...

HXY4407 30V P-Channel MOSFET

HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on ...

HXY4435 30V P-Channel MOSFET

HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on ...

HXY4441 30V P-Channel MOSFET

HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on ...

9435A -30V P-Channel Enhancement Mode MOSFET

-30V P-Channel Enhancement Mode MOSFET Description General Description: The 9435A is the single P...

HXY2301-2.3A Mosfet Power Transistor

HXY2301-2.3A Mosfet Power Transistor Description

Related Products