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MBR10150,200 Schottky Diode Bridge Rectifier , Diode Bridge Rectifier

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

MBR10150,200 TO-220A Plastic-Encapsulate Diodes

FEATURE

Schottky Barrier Chip
Low Power Loss,High Efficiency
Guard Ring Die Construction for Transient Protection
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,and Polarity Protection Applications

MAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)

ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)

Typical Characteristics

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HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on ...

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HXY2301-2.3A Mosfet Power Transistor Description

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