MT29F2G16ABAEAWP:E Nand Flash Memory Chip 128MX16 EEPROM ICS

MT29F2G16ABAEAWP:E Memory ICs NAND Flash Micron Data Storage 128MX16 EEPROM Ic

NAND Flash Memory Ic Chip Power Management ICs MICRON MT29F32G08CBADBWP

• FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP 

•  VDD = VDDQ = 1.35V (1.283–1.45V )
•  Backward compatible to VDD = VDDQ = 1.5V ±0.075V
  • Supports DDR3L devices to be backward com-patible in 1.5V applications
•  Differential bidirectional data strobe
•  8n-bit prefetch architecture
•  Nominal and dynamic on-die termination (ODT)for data, strobe, and mask signals
•  Programmable CAS (READ) latency (CL)
•  Programmable posted CAS additive latency (AL)
•  Programmable CAS (WRITE) latency (CWL)
•  Fixed burst length (BL) of 8 and burst chop (BC)

• NAND Flash Memory Ic Chip DDR SDRAM MICRON MT41K256M16HA-125:E

•  Ultrabook/Notebook DC/DC Converters
•  Multiphase Vcore and DDR Solutions
•  Point-of-Load Synchronous Buck in NetworkingTelecom, and Computing Systems
•  Battery-Powered Systems
•  Portable HDMI Applications
•  USB-OTG Applications
•  Cell Phones, Smart Phones

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•  3C Digital
•  Automotive Electronics
•  Measuring Instruments