Data Storage Memory IC Chip Dram IC IS42S16400F-6TL 16 Bit for Automotive

Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL 16 Bit

• Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL
• DRAM 64M, 3.3v, SDRAM, 4Mx16 16 bit

• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• Auto refresh (CBR)
• 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge

• Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6T

•  RF: VCOs, Receivers, ADCs
•  Cellular phones
•  Bluetooth®
•  Battery-Powered Systems
•  Portable HDMI Applications
•  USB-OTG Applications
•  Cell Phones, Smart Phones
•  PDAs, Pocket PCs
•  Portable Media Players
•  Digital Cameras