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SI3552DV-T1-E3 Field Effect Transistor Transistors FETs MOSFETs Arrays

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SI3552DV-T1-E3 Field Effect Transistor Transistors FETs MOSFETs Arrays

Country/Region china
Categories Solar Chargers
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Product Details

SI3552DV-T1-E3 Specifications

Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs105 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.15W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

SI3552DV-T1-E3 Packaging

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