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CAS300M12BM2 Field Effect Transistor Transistors FETs MOSFETs Arrays

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CAS300M12BM2 Field Effect Transistor Transistors FETs MOSFETs Arrays

Country/Region china
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Product Details

CAS300M12BM2 Specifications

Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C404A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 300A, 20V
Vgs(th) (Max) @ Id2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds11700pF @ 600V
Power - Max1660W
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule, Screw Terminals
Supplier Device PackageModule
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

CAS300M12BM2 Packaging

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