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STW28N60M2 Field Effect Transistor Transistors FETs MOSFETs Single

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STW28N60M2 Field Effect Transistor Transistors FETs MOSFETs Single

Country/Region china
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Product Details

STW28N60M2 Specifications

Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On,Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 100V
Vgs (Max)±25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Rds On (Max) @ Id, Vgs150 mOhm @ 12A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

STW28N60M2 Packaging

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