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STP110N8F6 Mosfet Discrete Semiconductor Devices For Switching Applications

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Product Range

IDiscrete Semiconductors Transistors MOSFET STMicroelectronics STP110N8F6 Switching applications
MOSFET N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 T0-220

App Characteristics

Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Basic Data

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	48 ns
Height:	15.75 mm
Length:	10.4 mm
Product Type:	MOSFET
Rise Time:	61 ns
Series:	STP110N8F6
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	162 ns
Typical Turn-On Delay Time:	24 ns
Width:	4.6 mm
Unit Weight:	0.068784 oz

DOWNLOAD DATASHEET

N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package

Application

Order Process

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