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IXYB82N120C3H1 IGBT Power Module Transistors IGBTs Single

KZ TECHNOLOGY (HONGKONG) LIMITED

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IXYB82N120C3H1 IGBT Power Module Transistors IGBTs Single

Country/Region china
Categories Switching Power Supply
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Product Details

IXYB82N120C3H1 Specifications

Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)164A
Current - Collector Pulsed (Icm)320A
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 82A
Power - Max1040W
Switching Energy4.95mJ (on), 2.78mJ (off)
Input TypeStandard
Gate Charge215nC
Td (on/off) @ 25°C29ns/192ns
Test Condition600V, 80A, 2 Ohm, 15V
Reverse Recovery Time (trr)420ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackagePLUS264™
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

IXYB82N120C3H1 Packaging

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