AM29LV010B-70JF - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Quick Detail:

1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Description:

The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash memory device organized as 131,072 bytes. The Am29LV010B has a uniform sector architecture. The device is offered in 32-pin PLCC and 32-pin TSOP packages. The byte-wide (x8) data appears on DQ7-DQ0. All read, erase, and program operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers.The standard Am29LV010B offers access times of 55, 70, and 90 ns (100 ns part is also available), allowing high speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The device requires only a single power supply (2.7V-3.6V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode.

The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes.

AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness.

The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.

Applications:

❥ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

❥ Manufactured on 0.32 µm process technology

❥ High performance

— Full voltage range: access times as fast as 55 ns

❥ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

❥ Flexible sector architecture

— Eight 16 Kbyte

— Supports full chip erase

— Sector Protection features:

Hardware method of locking a sector to prevent any program or erase operations within that sector

Sectors can be locked in-system or via programming equipment

Temporary Sector Unprotect feature allows code changes in previously locked sectors

❥ Unlock Bypass Mode Program Command

— Reduces overall programming time when issuing multiple program command sequences

❥ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

❥ Minimum 1,000,000 write cycle guarantee per sector

❥ 20 Year data retention at 125°C

— Reliable operation for the life of the system

❥ Package option

— 32-pin TSOP

— 32-pin PLCC

❥ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

❥ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

❥ Erase Suspend/Erase Resume

— Supports reading data from or programming data to a sector that is not being erased

Specifications:

Competitive Advantage:

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .

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