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NGD8205ANT4G IGBT Power Module Transistors IGBTs Single NGD8205ANT4G Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 390V Current - ...
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and ...
china
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TCA9544APWR PW544A tssop20 Integrated Circuits (ICs) Logic Signal Switches MORE STOCK P/N BRAND QTY P/N BRAND QTY P/N BRAND QTY L6566BH ST 2000 TJA1051TK/3,118 NXP 6000 S912ZVL64F0...
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QS3VH245PAG Purpose Relays Ic Bus Switch 1 X 8:1 20tssop Bus Switch 1 x 8:1 20-TSSOP Specifications of QS3VH245PAG TYPE DESCRIPTION Category Integrated Circuits (ICs) Logic Signal ...
Guangdong, china
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Dual N-Channel Logic Level PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process ...
Guangdong, china
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Military Standard Production Line Based MOSFET Product Description: High Power MOSFET is a type of MOSFET with high efficiency, which is widely used in applications such as Solar ...
Guangdong, china
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JY11M N Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on...
Shanghai, china
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BTS5215L Chipscomponent Electronic Components IC Chips. BTS5215L MOSFET Chip Integrated Circuit New And Original HSOP12 Source SWITCH IC-Power distribution SMART HI SIDE PWR SWITCH ...
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and ...
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Product Description: High Power MOSFET High Power MOSFET is an advanced type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a high power handling capacity and ...
Guangdong, china
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JY16M N Channel 600V TO220F-3 Package Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY16M utilizes the latest trench processing techniques to achieve ...
Shanghai, china
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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High Voltage MOSFET Transistor for Adaptors Application Technology Product Description: High Voltage MOSFET is a kind of MOSFET transistor designed for high voltage application. It ...
Guangdong, china
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JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density ...
Shanghai, china
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
china
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JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve ...
Shanghai, china
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
china
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JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the ...
Shanghai, china
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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate ...
china
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
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