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2v 700ma 1.5w 3030 50-70lm 635-666nm SMD LED Chip For Plant Lighting

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Phoenix (suzhou) electronic Co.,ltd

2v 700ma 1.5w 3030 50-70lm 635-666nm SMD LED Chip For Plant Lighting

Country/Region	china
City & Province	suzhou jiangsu

Product Details

2V 700MA 1.5W CERAMIC3030 50-70LM 635-666NM SMD LED CHIP FOR PLANT LIGHTING

Characteristic

Professional plant led:

Dark blue (450 nm) and ultra red (660 nm) versions provide the light required for photosynthesis

The far infrared (730 nm) version can control the whole process of plants from germination to vegetative growth and then to flowerin

EQ white light can realize humanized working environment

High energy efficiency( μ mol/J)

Maximum drive current high

Low thermal resistance

Multiple radiation angles - 80 °, 120 ° and 150 ° wide illumination characteristics

Highly reliable ceramic package with long service life and corrosion resistance

Rugged even in wet environments

In addition, it also provides blue light, true green light, yellow light, red light and other versions, which are suitable for special lighting needs

Optimum heat / cold flux coefficient (85 ° C ~ 25 ° C)

Maximum Ratings

Parameter Symbol Values

Operating Temperature	Top	min. max.	-40 °C 125 °C
Storage Temperature	Tstg	min. max.	-40 °C 125 °C
Junction Temperature	T	max.	135 °C
Forward current	I	min. max.	100 mA 1400 mA
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C	FS	max.	1500 mA
Reverse voltage 2)	V		Not designed for reverse operation
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)	ESD		8 kV

Characteristics

I = 700 mA; TJ = 25 °C

Parameter Symbol Values

Peak Wavelength	λpeak typ. 660 nm
Centroid Wavelength 3) I = 700 mA	λcentroid min. 646 nm typ. 657 nm max. 666 nm
Dominant Wavelength 3) I = 700 mA	λdom typ. 640 nm
Spectral Bandwidth at rel,max	∆λ typ. 20 nm
Viewing angle at 50% IV	2φ typ. 140 °
Forward Voltage 4) I = 700 mA	1.8V 2.00V 2.20V
Reverse current 2)	Not designed for reverse operation
Electrical thermal resistance junction/solderpoint with efficiency ηe = 74 %	RthJS elec. typ. 1.3 K / W

Forward Voltage Groups

Group Forward Voltage 4)

I = 700 mA

1.80 V	1.90 V
1.90 V	2.00 V
2.00 V	2.10 V
2.10 V	2.20 V

Centroid

Group

Centroid Wavelength 3)

I = 700 mA

λcentroid

646NM

666NM

Dimensional Drawing

Further Information:

Approximate Weight: 28.0 mg

Package marking: Anode

Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.

Reflow Soldering Profile

Product complies to MSL Level 2 acc. to JEDEC J-STD-020E

Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit

Minimum Recommendation Maximum

Ramp-up rate to preheat*) 2 25 °C to 150 °C	3	K/s
tS 60 100 T to T	120	s
Ramp-up rate to peak*) T to T 2	3	K/s
Liquidus temperature TL 217		°C
Time above liquidus temperature tL 80	100	s
Peak temperature T 245	260	°C
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K	30	s
Ramp-down rate* 3 T to 100 °C	6	K/s
Time 25 °C to TP	480	s

All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range