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ixfk27n80q igbt mosfet transistor

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SOT-553 IGBT Mosfet Transistor Integrated Circuits IC Chips Semiconductor SN74LVC1G06DRL SN74LVC1G06DRLR Specifications Part Status Active Logic Type Inverter Number of Circuits 1 ...
china
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low ...
Guangdong, china
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Integrated Circuit Chip NTMYS5D3N04CTWG N-Channel MOSFETs Transistors 4-LFPAK​ Product Description Of NTMYS5D3N04CTWG NTMYS5D3N04CTWG is 40V, 5.3mOhm, 71A - Power, Single N-Channel ...
china
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ISO5852SDW IC Electronic Components Isolated IGBT MOSFET gate drivers Product description rated over a −40°C to +105°C temperature Part number ISO5852SDW is manufactured by TI ...
Guangdong, china
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Product Description Product Detail Packaging Bulk Part Status Last Time Buy Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector ...
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Original IRF7404TRPBF SOP8 P Channel 20V 7.7A SMD MOSFET Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...
Guangdong, china
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IRG7PH42UDPBF IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current ...
china
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si ...
Guangdong, china
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Get powerful performance with STD12N10L MOSFET Transistors Pros and Cons of using STD12N10L MOSFET Transistors As a seeker of powerful performance from your electronic devices, you...
china
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2SC5200-O POWER AMPLIFIER APPLICATIONS high power mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE ...
Guangdong, china
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FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm...
Guangdong, china
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Product Description: The High Voltage MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and ...
Guangdong, china
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a ...
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HOT Mosfet Transistor Sak-tc387qp Sak-tc387qp-160f300s Ae Tc387qp-160f300s Electronics Components A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of ...
Guangdong, china
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Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel ...
china
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Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher ...
Guangdong, china
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VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - ...
china
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ISO9001.pdf Application: IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low ...
china
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Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 1200V 50A IGBT Half Bridge Module Features: □ 1200V Trench+ Field Stop technology □ Freewheeling diodes with fast and soft reverse ...
Jiangsu, china
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