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MR4A16BYS35 IC RAM 16MBIT PARALLEL 54TSOP2 Everspin Technologies Inc.

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MR4A16BYS35 IC RAM 16MBIT PARALLEL 54TSOP2 Everspin Technologies Inc.

Country/Region china
City & Province shenzhen
Categories Electric Power Tools
InquireNow

Product Details

Product Details

MR3 Reflector Lamp Assemblies

MR4 Reflector Lamp Assemblies

MR6 Reflector Lamp Assemblies

Adjustable Focus Reflector Assemblies

Specifications

AttributeAttribute Value
ManufacturerEverspin
Product CategoryMemory ICs
SeriesMR4A16B
PackagingTray Alternate Packaging
Mounting-StyleSMD/SMT
Package-Case54-TSOP (0.400", 10.16mm Width)
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply3 V ~ 3.6 V
Supplier-Device-Package54-TSOP2
Memory Capacity16M (1M x 16)
Memory-TypeMRAM (Magnetoresistive RAM)
Speed35ns
Access-Time35 ns
Format-MemoryRAM
Maximum Operating Temperature+ 70 C
Operating temperature range0 C
Operating-Supply-Current110 mA
Interface-TypeParallel
Organization1 M x 16
Data-Bus-Width16 bit
Supply-Voltage-Max3.6 V
Supply-Voltage-Min3 V
Package-CaseTSOP-54
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
MR4A16BYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BYS35R
MR4A16BCYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BCYS35R
MR4A16BMYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, ROHS COMPLIANT, MS-024, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BMYS35R
MR4A16BMYS35
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, ROHS COMPLIANT, MS-024, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BMYS35
MR4A16BCYS35
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BCYS35

Descriptions

MRAM (Magnetoresistive RAM) Memory IC 16Mb (1M x 16) Parallel 35ns 54-TSOP2
MRAM 16Mbit Parallel 3.3V 54-Pin TSOP Tray
NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM

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