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Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
Contact name:Sales Manager
ShenZhen Mingjiada Electronics Co.,Ltd. |
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Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
Description Of A2U12M12W2-F2
A2U12M12W2-F2 is power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Product Attributes Of A2U12M12W2-F2
IGBT Silicon Carbide Modules | |
Full Bridge | |
SiC | |
1200 V | |
-10 V to 22 V | |
Press Fit | |
- 40 C | |
+ 150 C |
All Features Of A2U12M12W2-F2
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
Electrical Topology And Pin Description Of A2U12M12W2-F2
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
