Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8

 Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8​

Product Description Of IMBG65R039M1HXTMA1

IMBG65R039M1HXTMA1 is N-Channel 650V CoolSiC M1 SiC Trench Power Device, built over the solid silicon carbide technology.

Specification Of IMBG65R039M1HXTMA1

Features Of IMBG65R039M1HXTMA1

• Commutation robust fast body diode
• Reduced system cost and complexity
• Higher robustness and system reliability

Applications Of IMBG65R039M1HXTMA1

• Server
• Telecom
• Switching Power Supply (SMPS)

Other Electronic Components In Stock​

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.