NCS20061MUTAG onsemi

Here is a potential introduction for the ON Semiconductor NCS20061MUTAG P-channel MOSFET:

NCS20061MUTAG

The NCS20061MUTAG is a compact P-channel MOSFET from ON Semiconductor that offers high current handling capability in an extremely tiny 3x3mm DFN package. As a low voltage switch, it enables efficient power control where space is at an absolute premium.

Key Features:

• 60V maximum drain-source voltage
• 20A continuous drain current rating
• ultra-low 5mΩ typical on-resistance
• 3x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating junction temperature range

Ideal for tightly-integrated load switch applications needing minimal real estate.

Allows high current switching with extremely low conduction losses.

Thermal pad efficiently dissipates heat from 20A loads in the ultracompact die.

Rugged 150°C junction rating suits automotive and industrial environments.

Best-in-class RDS(on) maximizes efficiency even in tightly-spaced designs.

Simplifies dense board layouts where traditional MOSFET sizes are prohibitive.

Enables incorporation of high performance power switching with minimal footprint.