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Here is a potential introduction for the ON Semiconductor NCS20094DR2G Dual 90A N-Channel MOSFET:
NCS20094DR2G
The NCS20094DR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 90A per channel. Available in an industry-standard HVSO-8 package, it provides a rugged and optimized solution for controlling substantial load currents across two independent channels.
Key Features:
Enables robust dual 90A switching in a rugged through-hole package.
Independent high-current channels maximize design flexibility.
Ultra-low resistance enables high-efficiency power distribution.
On-chip safeguards simplify designs handling significant switching loads.
Package withstands stresses from heavy industrial environments.
Ideal for high-power applications such as welding, 3-phase inverters.
Simplifies partitioning of dual 90A load control requirements.
Density, ruggedness and capability optimized for heavy load applications.