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Here is a potential product introduction for the ON Semiconductor NCV21912DMR2G Power MOSFET:
NCV21912DMR2G
The NCV21912DMR2G delivers industry-leading power density in ON Semiconductor’s ultra-compact PowerDI® DFN package. As a 120A N-channel MOSFET optimized for the most stringent high-current applications within tight size constraints, it enables unmatched current handling in minimal footprints.
Key Features:
Breakthrough 120A current density in the industry's most space-efficient package.
Outstanding power-to-size ratio fits significantly more capability onto boards.
AEC-Q101 ensures reliable operation under harsh automotive environments.
PowerDI® excels thermally and electrically even in extreme size limitations.
Simply the highest current solution available within the tightest design constraints.
On Semiconductor's density optimized leader for applications with zero space tolerance.
Ideal where board space is severely limited but current needs are extreme.