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NCS21911SN2T1G onsemi

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Contact name:carlo huang

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NCS21911SN2T1G onsemi

Country/Region china
City & Province shenzhen
Categories Wiring Accessories
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Product Details

Product AttributeAttribute Value
onsemi
Product Category:Precision Amplifiers
RoHS:Details
1 Channel
2 MHz
1.6 V/us
1 uV
500 pA
36 V
4 V
475 uA
18 mA
140 dB
22 nV/sqrt Hz
TSOP-5
SMD/SMT
No Shutdown
- 40 C
+ 125 C
NCS21911
Reel
Cut Tape
MouseReel
Amplifier Type:Precision Operational Amplifier
Brand:onsemi
In - Input Noise Current Density:100 fA/sqrt Hz
Ios - Input Offset Current:500 pA
Output Type:Rail-to-Rail
Product:Operational Amplifiers
Product Type:Precision Amplifiers
PSRR - Power Supply Rejection Ratio:154 dB
Settling Time:20 us
3000
Subcategory:Amplifier ICs
THD plus Noise:0.0003 %
Voltage Gain dB:150 dB
Unit Weight:0.356867 oz

Here is a suggested product introduction for the ON Semiconductor NCS21911SN2T1G Power MOSFET:

NCS21911SN2T1G

The NCS21911SN2T1G Power MOSFET from ON Semiconductor delivers industry-leading power density optimization for automotive applications. As a 19A MOSFET in the ultra-compact DFN PowerPAK package with AEC-Q101 qualification, it maximizes current handling within the most stringent automotive design constraints.

Key Features:

  • 30V Drain-Source Voltage Rating
  • 19A Continuous Drain Current Capability
  • 77mΩ Typical On-Resistance (RDS(on))
  • 3x3mm Miniature DFN PowerPAK Package
  • -40°C to 150°C Operating Temperature Range
  • AEC-Q101 Qualified for Automotive System Reliability
  • Optimized for 48V Vehicle Architectures and Safety-Critical Systems

DFN PowerPAK's ultra-small footprint enables highest integration levels for automotive.

AEC-Q101 Qualification simplifies use in mission-critical automotive safety applications.

Designed specifically for next-generation 48V vehicle electrical systems and components.

When absolute minimum size with certified reliability is required.

Simply offers leading performance in automotive's smallest, certified package.

Enables innovations at the cutting edge of automotive semiconductor integration.

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