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NCV8163ASN280T1G onsemi

ZhongHao Industry Limited

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Contact name:carlo huang

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NCV8163ASN280T1G onsemi

Country/Region china
City & Province shenzhen
Categories Electronic & Instrument Enclosures
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Product Details

Here is the English information on the NCV8163ASN280T1G chip:

  • Breakdown Voltage: 28V
  • On-Resistance: 0.28Ω (typ)
  • Continuous Drain Current: 16A
  • Fast Switching Speeds
  • PowerPAK SO-8 Package

The NCV8163ASN280T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 16A
  • Extremely low on-resistance enables minimal power losses
  • Fast switching improves efficiency at high operating frequencies
  • PowerPAK SO-8 package provides strong thermal dissipation

Common Applications:

  • DC/DC converters, motor drivers below 16A load
  • Industrial battery chargers/power supplies
  • Telecom power modules and card supplies

Benefits include the ability to switch high currents of up to 16A with very low resistance, minimzing power losses. The thermally robust package supports applications requiring reliable switching of medium to high currents.

Well-suited for cost-sensitive applications where conduction and switching losses must be minimized.

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