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NCP139AFCT105T2G onsemi

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NCP139AFCT105T2G onsemi

Country/Region china
City & Province shenzhen
Categories Power Supplies
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Product Details

Here is the English information on the NCP139AFCT105T2G chip:

  • Breakdown Voltage: 10V
  • On-Resistance: 1.05 mΩ (typ)
  • Continuous Drain Current: 1.39A
  • Fast Switching Speeds
  • PowerPAK SO-8 Package

The NCP139AFCT105T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 1.39A
  • Extremely low on-resistance minimizes conduction losses
  • Fast switching improves conversion efficiency at high frequencies
  • PowerPAK SO-8 package provides strong thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 1.39A loads
  • Battery chargers and protection circuits
  • Systems requiring high efficiency at low currents

Benefits include the ability to switch up to 1.39A with very low resistance and losses. The thermally robust package supports continuous operation.

Well-suited for applications where precise low current switching with minimal losses is important.

In summary, the NCP139AFCT105T2G combines low resistance switching performance up to 1.39A with a focus on thermal management and efficiency.

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