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NCV57200DR2G onsemi

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NCV57200DR2G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Ceramics
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Product Details

Here is the English description of the NCV57200DR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 7A
  • Fast Switching Speeds
  • TO-220 FullPak 2L Package

The NCV57200DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 7A
  • Low RDS(on) minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

  • DC/DC converters and voltage regulators below 7A loads
  • Motor drivers and controls under 7A current
  • General purpose switching under 7A load

Benefits include the ability to switch up to 7A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 7A where heat dissipation is important.

In summary, the NCV57200DR2G offers 7A current handling capability with minimal resistance and losses, and emphasizes thermal management.

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