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NSVC2030JBT3G onsemi

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NSVC2030JBT3G onsemi

Country/Region china
City & Province shenzhen
Categories Relays
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Product Details

Here is the English description of the NSVC2030JBT3G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 20A
  • On-Resistance: N/A (typ)
  • Fast Switching Speeds
  • Power Mini-Flat No-Lead Package

The NSVC2030JBT3G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 20A
  • Low RDS(on) minimizes conduction losses
  • Fast switching speeds
  • Power Mini-Flat no-lead package saves space on boards

Common Applications:

  • Point-of-load DC/DC converters below 20A loads
  • Motor drives and controls up to 20A load current
  • Applications where PCB space is restricted

Benefits include the ability to reliably switch up to 20A in a compact package. Its miniature size makes it suitable for dense designs.

Well-suited for power applications requiring up to 20A switching where board space is limited.

In summary, the NSVC2030JBT3G provides industry-leading 20A switching capability in an ultra small footprint package.

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