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NCP5901BDR2G onsemi

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NCP5901BDR2G onsemi

Country/Region china
City & Province shenzhen
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Product Details

Here is the English description of the NCP5901BDR2G chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 5.9A
  • On-Resistance: N/A (typ)
  • Fast Switching Speeds
  • TO-263 Package

The NCP5901BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 5.9A
  • Low RDS(on) minimizes conduction losses
  • Fast switching speeds
  • TO-263 plastic package provides good thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 5.9A loads
  • Motor drives and controls under 5.9A load current
  • General purpose switching under 5.9A load

Benefits include the ability to precisely switch up to 5.9A with low losses. The plastic TO-263 package ensures reliable operation.

Well-suited for applications requiring switching of currents up to 5.9A where heat dissipation is important.

In summary, the NCP5901BDR2G offers 5.9A switching capability with low resistance and losses in a thermally robust package.

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