NCL30170ADR2G onsemi

Here is the English description of the NCL30170ADR2G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 3.01A
• On-Resistance: 70 mΩ (typ)
• Fast Switching Speeds
• PowerSO8 Package

The NCL30170ADR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 3.01A
• Low RDS(on) of 70 mΩ minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• PowerSO8 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 3.01A loads
• Motor drive circuits requiring up to 3.01A operation
• General purpose switching under 3.01A loads

Benefits include reliable 3.01A performance with low on-resistance. The PowerSO8 enables balanced size and thermal management.

Well-suited for applications requiring precise switching of currents up to 3.01A where reducing conduction losses is important.

In summary, the NCL30170ADR2G delivers 3.01A switching capability with ultra-low resistance and optimized thermal characteristics in a compact package.