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NCP161ASN330T1G onsemi

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NCP161ASN330T1G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Product Agents
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Product Details

Here is the English description of the NCP161ASN330T1G chip:

  • Function: Dual N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.61A per channel
  • On-Resistance: 330mΩ (typ) per channel
  • Fast Switching Speed
  • PowerSO-8 Package

The NCP161ASN330T1G is a dual N-channel MOSFET from ON Semiconductor.

Key Features:

  • Integrated dual switch capable of 1.61A per channel
  • Low RDS(on) of 330mΩ per channel reduces losses
  • PowerSO-8 package saves space on circuit boards
  • Allows independent control of two 1.61A loads

Common Applications:

  • Synchronous buck converters and regulators
  • Dual channel motor driver circuits up to 1.61A each
  • Any application requiring dual independent switches

Benefits include a compact dual switch solution optimized to efficiently control up to 1.61A per channel.

Well-suited for applications requiring independent switching of 1.61A loads across two channels in a minimized footprint.

In summary, the NCP161ASN330T1G integrates a dual 1.61A/channel switch with low resistance in a small package.

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