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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

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Product Details

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

 

BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW.

In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more

protection by storing the loose parts in an outer tube.

This MOSFET transistor has an operating temperature range of -40 °C to 175 °C.

This N channel MOSFET transistor operates in enhancement mode.

 

Specification:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
TEMPFET®
Package
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
49 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
FET Feature
Temperature Sensing Diode
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
P-TO220-7-230
Package / Case
TO-220-7

 

 

Environmental & Export Classifications
ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS

8541.29.0095

 

Part numberBTS282Z E3230
Base part numberBTS282Z
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95

 

 

 

 

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