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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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2 Inch Undoped GaN On Sapphire Substrates For LEDs And Solid-State
Lighting Tech
PAM-XIAMEN’s Template Products consist of crystalline layers of
gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium
nitride (AlGaN)and indium gallium nitride (InGaN), which are
deposited on sapphire substrates. PAM-XIAMEN’s Template Products
enable 20-50% shorter epitaxy cycle times and higher quality
epitaxial device layers, with better structural quality and higher
thermal conductivity,which can improve devices in the cost, yield,
and performance.
PAM-XIAMEN’sGaN on sapphire templates are available in diameters
from 2" up to 6",and consist of a thin layer of crystalline GaN
grown on a sapphire substrate. Epi-ready templates now available..
Here shows detail specification:
2inch Undoped GaN/Sapphire Substrates
| Item | PAM-T-GaN-50-U |
| Dimension | 50.8 ±0.1 mm |
| Thickness | 5 ±1 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.5 Ω·cm |
| Carrier Concentration | <5X1017CM-3 |
| Mobility | ~ 300cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; Back side: etched or polished. |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2inch Undoped GaN/Sapphire Substrates
FWHM and XRD report
A test report is necessary to show the compliance between custom
description and our final wafers data. We will test the wafer
characerization by equipment before shipment, testing surface
roughness by atomic force microscope, type by Roman spectra
instrument, resistivity by non-contact resistivity testing
equipment,micropipe density by polarizing microscope, orientation
by X-ray Orientator etc. if the wafers meet the requirement, we
will clean and pack them in 100 class clean room, if the wafers do
not match the custom spec, we will take it off.
Testing Project: FWHM and XRD project
The half-height full width (FWHM) is an expression of the range of
functions given by the difference between two extreme values of the
independent variable equal to half of its maximum. In other words,
it is the width of the spectral curve measured between those points
on the Y-axis, which is half the maximum amplitude.
Below is an example of FWHM and XRD of AlN template:
FWHM and XRD of AlN template
FWHM and XRD of AlN template
Here we show experiment as an example:
Experiment on GaN on sapphire:Optoelectronic Properties and
Structural Characterization of GaN Thick Films on Different
Substrates through Pulsed Laser Deposition:
Experiment on GaN on sapphire:Optoelectronic Properties and
Structural Characterization of GaN Thick Films on Different
Substrates through Pulsed Laser Deposition:
All GaN film samples were deposited on different substrates by PLD
at 1000 ◦C in a nitrogen plasma ambient atmosphere. The chamber was
pumped down to 10−6 Torr before the deposition process began, and
N2 gas (with a purity of 99.999%) was introduced. The working
pressure once the N2 plasma was injected was 1.13 × 10−4 Torr. A
KrF excimer laser (λ = 248 nm, Lambda Physik, Fort Lauderdale, FL,
USA) was employed as the ablation source and operated with a
repetition rate of 1 Hz and a pulse energy of 60 mJ. The average
growth rate of the GaN film was approximately 1 µm/h. The laser
beam was incident on a rotating target at an angle of 45◦ . The GaN
target was fabricated by HVPE and set at a fixed distance of 9 cm
from the substrate before being rotated at 30 rpm during film
deposition. In this case, ~4 µm-thick GaN films were grown on a
GaN/sapphire template (sample A), sapphire (sample B), Si(111)
(sample C), and Si(100) (sample D). For the GaN on sample A, a 2-µm
GaN layer was firstly deposited on sapphire substrate by MOCVD.
Scanning electron microscopy (SEM, S-3000H, Hitachi, Tokyo, Japan),
transmission electron microcopy (TEM, H-600, Hitachi, Tokyo,
Japan), atomic force microscopy (AFM, DI-3100, Veeco, New York, NY,
USA), double-crystal X-ray diffraction (XRD, X’Pert PRO MRD,
PANalytical, Almelo, The Netherlands), low-temperature
photoluminescence (PL, Flouromax-3, Horiba, Tokyo, Japan), and
Raman spectroscopy (Jobin Yvon, Horiba, Tokyo, Japan) were employed
to explore the microstructure and optical properties of the GaN
templates deposited on different substrates. The electrical
properties of the GaN films were determined by Van der Pauw-Hall
measurement under liquid nitrogen cooling at 77 K
Figure 2 shows a comparison of the typical XRD patterns of GaN
(0002) films grown on different substrates. It can be seen that
there is a variation in the FWHM value of the (0002) diffraction
peak, and intensities of the GaN diffraction peak on the different
substrates were obtained at around 34.5 degrees. The intensity of
GaN (0002) in sample A is the strongest among all samples, which
indicates that the GaN films on the GaN/sapphire template are
highly c-oriented and have better crystalline quality. The FWHM of
GaN (0002) values for samples A, B, C, and D were measured at 0.19◦
, 0.51◦ , 0.79◦ , and 1.09◦ , respectively. However, the XRD peak
intensity increases as FWHM decreases; this is attributed to the
increase in the crystallite size due to either the aggregation of
small grains or grain boundary movement during the growth process.
Since the FWHM of the XRD diffraction peak is relative to the
average crystallite grain size in the film [26], the grain size of
GaN grown on the different substrates is calculated using the
Debye-Scherer equation [27]: D = 0.9λ/FWHMcosθ (1) where D is the
crystallite size, λ is the X-ray wavelength, and θ is the
diffraction angle. The crystallite sizes of samples A, B, C, and D
are estimated to be 57, 20, 13, and 9 nm, respectively. These
results indicate that the crystalline quality of GaN films grown on
samples A and B is better than that of the films grown on samples C
and D. Appl. Sci. 2017, 7, 87 3 of 9 GaN/sapphire template are
highly c‐oriented and have better crystalline quality. The FWHM of
GaN (0002) values for samples A, B, C, and D were measured at
0.19°, 0.51°, 0.79°, and 1.09°, respectively. However, the XRD peak
intensity increases as FWHM decreases; this is attributed to the
increase in the crystallite size due to either the aggregation of
small grains or grain boundary movement during the growth process.
Since the FWHM of the XRD diffraction peak is relative to the
average crystallite grain size in the film [26], the grain size of
GaN grown on the different substrates is calculated using the
Debye‐Scherer equation [27]: D = 0.9λ/FWHMcos θ (1) where D is the
crystallite size, λ is the X‐ray wavelength, and θ is the
diffraction angle. The crystallite sizes of samples A, B, C, and D
are estimated to be 57, 20, 13, and 9 nm, respectively. These
results indicate that the c
Figure 2. X-ray diffraction (XRD) measurements results of GaN films
grown on different substrates
Conclusion: the GaN thick films grown on a GaN/sapphire template,
sapphire, Si(111), and Si(100) by high-temperature PLD. The
substrate effect on GaN crystalline growth quality, surface
morphology, stress behavior, and interface property were studied,
if you need more product information, please enquire us.
