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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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P Type , Gallium Arsenide Wafer With (100) Orientation , 4”, Test Grade
PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | |
| Conduction Type | SC/p-type with Zn dope Available | |
| Growth Method | VGF | |
| Dopant | Mg | |
| Wafer Diamter | 4, inch | |
| Crystal Orientation | (100)2°/6°/15° off (110) | |
| OF | EJ or US | |
| Carrier Concentration | E19 | |
| Resistivity at RT | — | |
| Mobility | 1500~3000cm2/V.sec
| |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request
| |
| Surface Finish | P/E or P/P
| |
| Thickness | 220~450um
| |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
Properties of GaAs Crystal
| Properties | GaAs |
| Atoms/cm3 | 4.42 x 1022 |
| Atomic Weight | 144.63 |
| Breakdown Field | approx. 4 x 105 |
| Crystal Structure | Zincblende |
| Density (g/cm3) | 5.32 |
| Dielectric Constant | 13.1 |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 |
| Electron Affinity (V) | 4.07 |
| Energy Gap at 300K (eV) | 1.424 |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 |
| Intrinsic Debye Length (microns) | 2250 |
| Intrinsic Resistivity (ohm-cm) | 108 |
| Lattice Constant (angstroms) | 5.6533 |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 |
| ΔL/L/ΔT (1/deg C) | |
| Melting Point (deg C) | 1238 |
| Minority Carrier Lifetime (s) | approx. 10-8 |
| Mobility (Drift) | 8500 |
| (cm2/V-s) | |
| µn, electrons | |
| Mobility (Drift) | 400 |
| (cm2/V-s) | |
| µp, holes | |
| Optical Phonon Energy (eV) | 0.035 |
| Phonon Mean Free Path (angstroms) | 58 |
| Specific Heat | 0.35 |
| (J/g-deg C) | |
| Thermal Conductivity at 300 K | 0.46 |
| (W/cm-degC) | |
| Thermal Diffusivity (cm2/sec) | 0.24 |
| Vapor Pressure (Pa) | 100 at 1050 deg C; |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) | |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |
What is GaAs wafer?
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.
What is the Mechanical properties, elastic constants, lattice vibrations of GaAs Wafer?
| Bulk modulus | 7.53·1011 dyn cm-2 |
| Density | 5.317 g cm-3 |
| Hardness on the Mohs scale | between 4 and 5 |
| Surface microhardness (using Knoop's pyramid test) | 750 kg mm-2 |
| Cleavage plane | {110} |
| Piezoelectric constant | e14=-0.16 C m-2 |
C11=11.90·1011 dyn/cm2
C12=5.34·1011 dyn/cm2
C44=5.96·1011 dyn/cm2
 | Temperature dependences of elastic constants. For 0<T<Tm=1513K (in units of 1011 dyn cm-2) C11= 12.17 - 1.44·10-3T C12= 5.46 - 0.64·10-3T C44= 6.16 - 0.70·10-3T |
| Bulk modulus (compressibility-1) | Bs= 7.53·1011dyn/cm2 |
| Shear modulus | C'= 3.285·1011dyn/cm2 |
| [100] Young's modulus | Yo= 8.59·1011dyn/cm2 |
| [100] Poisson ratio | σo = 0.31 |
| Wave propagation Direction | Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL | (C11/ρ )1/2 | 4.73 |
| VT | (C44/ρ )1/2 | 3.35 | |
| [110] | Vl | [(C11+Cl2+2C44)/2ρ ]1/2 | 5.24 |
| Vt|| | Vt||=VT=(C44/ρ)1/2 | 3.35 | |
| Vt⊥ | [(C11-C12)/2ρ]1/2 | 2.48 | |
| [111] | Vl' | [(C11+2C12+4C44)/3ρ]1/2 | 5.4 |
| Vt' | [(C11-C12+C44)/3ρ]1/2 | 2.8 |
(in units of 1012 Hz)
| νTO(Γ) | 8.02 | νLO (X) | 7.22 |
| νLO(Γ) | 8.55 | νTA(L) | 1.86 |
| νTA(X) | 2.36 | νLA(L) | 6.26 |
| νLA(X) | 6.80 | νTO(L) | 7.84 |
| νTO(X) | 7.56 | νLO(L) | 7.15 |
Are You Looking for GaAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
