Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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N Type , Single Crystal GaSb Wafer , 4”, Dummy Grade
PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
4" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Tellurium |
| Conduction Type | N-type |
| Wafer Diameter | 4" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 800±25um |
| Primary Flat Length | 32.5±2.5mm |
| Secondary Flat Length | 18±1mm |
| Carrier Concentration | (1-20)x1017cm-3 |
| Mobility | 2000-3500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <15um |
| BOW | <15um |
| WARP | <20um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Elastic constants,Acoustic Wave Speeds,Phonon frequencies.
| Bulk modulus | 5.63·1011 dyn cm-2 |
| Density | 5.614 g cm-3 |
| Hardness on the Mohs scale | 4.5 |
| Surface microhardness (using Knoop's pyramid test) | 450 kg mm-2 |
| Cleavage plane | {100} |
| Piezoelectric constant | e14= -0.13 C m-2 |
C11= 8.83·1011 dyn cm-2
C12= 4.02·1011 dyn cm-2
C44= 4.32·1011 dyn cm-2
 | Temperature dependences of elastic constants. |
| Bulk modulus (compressibility-1) | Bs= 5.62·1011dyn cm-2 |
| Shear modulus | C'= 2.4·1011dyn cm-2 |
| [100] Young's modulus | Yo= 6.31·1011dyn cm-2 |
| [100] Poisson ratio | σo = 0.31 |
| Wave propagation Direction | Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL | (C11/ρ )1/2 | 3.97 |
| VT | (C44/ρ)1/2 | 2.77 | |
| [100] | Vl | [(C11+Cl2+2C44)/2ρ]1/2 | 4.38 |
| Vt|| | Vt||=VT=(C44/ρ)1/2 | 2.77 | |
| Vt⊥ | [(C11-C12)/2ρ]1/2 | 2.07 | |
| [111] | Vl' | [(C11+2C12+4C44)/3ρ]1/2 | 4.50 |
| Vt' | [(C11-C12+C44)/3ρ]1/2 | 2.33 |
(in units of 1012 Hz)
| νLO(Γ15) | 6.87 | νTA(L3) | 1.37 |
| νTA(X5) | 1.70 | νLA(L1) | 4.60 |
| νLA(X3) | 4.99 | νLO(L1) | 6.15 |
| νTO(X5) | 6.36 | νTO(L3) | 6.48 |
| νLO(X1) | 6.35 |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
