N Type , GaSb Crystal Wafer Substrate , 3”, Prime Grade, Epi-Ready

N Type , GaSb Crystal Wafer Substrate , 3”, Prime Grade, Epi-Ready
 
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).
 
3" GaSb Wafer Specification

Electrical properties of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters
 
Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels. 1. Nd= 1.7·1018 cm-3 2. Nd= 2.8·1017 cm-3 Broken curves represent the experimental data. Continuous curves represent theoretical calculations.
	Electron Hall mobility versus electron concentration no. T=77 K. Open circles represent measurements with a group of samples having approximately the same residual acceptor concentrations Na. Full symbols:specimens with lower residual acceptor concentrations. Solid lines represent the theoretical calculations for different values of compensating acceptor densities - either singly (Na-) or doubly (Na--) ionized. 1. Na- = 1.2·1017 or Na-- = 0.4·1017 cm-3 2. Na- =2.85·1017 or Na-- =0.95·1017 cm-3 3. Na- = 4.5·1017 or Na-- = 1.5·1017 cm-3
	Hole Hall mobility versus temperature at different compensation levels. 1. Na= 1.39·1017 cm-3; Nd= 9·1015 cm-3; 2. Na= 1.3·1017 cm-3; Nd= 9.5·1016 cm-3; 3. Na= 1.1·1017cm-3; Nd= 9.5·1016 cm-3
	Temperature dependence of hole Hall mobility. MBE technique. Hole concentration at 300 K: 1. - 2.28·1016 cm-3; 2. - 1.9·1019 cm-3.
	The hole Hall mobility versus hole concentration, 300 K. Experimental data are taken from five different papers

Transport Properties in High Electric Fields

	Calculated field dependence of the electron drift velocity, 300 K.
	Calculated (solid) end experimental (points) current density dependencies versus the electric field, 300 K.
	Fraction of electrons in Γ, L, X valleys as a function of electric field,300 K n=6.8·1016 cm-3
	Electron temperature as a function of the electric field, T=77 K. full and open circle - experimental data curve are calculated

Impact Ionization

	The dependences of αi and βi> versus 1/F. T=77 K Open symbols : F (111). Filled symbols : F (100).
	The dependences of αi and βi versus 1/F). T=300 K F (100).

Recombination Parameters

	Radiative lifetime versus donor concentration, T =77 K, GaSb(Te). To extract these dependences from experimental data the values of internal quantum efficiency η were taken: open circles η=0.8; filled circles η=1;
	Nonradiative lifetime versus donor concentrations, T =77K, GaSb(Te). open circles η= 0.8; filled circles η= 1; (Agaev et al. [1984]).
	Electron radiative (triangles) and nonradiative (squares) lifetime versus acceptor concentration, p-GaSb, T=77 K.
	Electron lifetime versus temperature at different acceptor concentrations. Na (cm-3): 1. 5·1018; 2. 2.2·1019; 3. 3.5·1019.

 
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