Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub
Silicon epitaxial wafer is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)
The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.
Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm
Epilayer thickness: < 1 um up to 150 um
Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-, N/P/P+, P/P+, P-/P/P+.
Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.
Our advantages at a glance
1. Advanced epitaxy growth equipment and test equipment.
2. Offer the highest quality with low defect density and good surface roughness.
3. Strong research team support and technology support for our customers
PAM-XIAMEN Epitaxial Wafer Services Specifications:
• Diameters: 50mm,75mm,100mm, 125mm, 150mm
• Wafer orientation: <100>, <111>, <110>
• EPI thickness: 4μm to 150μm
• Dopants: Arsenic, phosphorus, boron
• Typical resistivity ranges
• 0.05 – 1,200 ohm-cm
• 3000 – 5,000 ohm-cm (intrinsic layers)
4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon layer / Phosphorus Doped Layer/Ion Implantation Layer/Silicon Substrate
| 4" Silicon Epitaxial Wafer | |
| Si Epi Wafer Structure | Top Layer Instrinct Silicon layer / Phosphorus Doped Layer/Ion Implantation Layer/Silicon Substrate |
| Top Layer Instrinct Silicon layer | Risistivity≥50Ωcm, Thickness 5μm, Residual Carrier Concentration<1×1014/cm3 |
| Phosphorus Doped Layer | Risistivity Around 0.025Ωcm (Concentration Doped Phosphorous 7×017/cm3), Thickness 20μm, Residual Carrier Concentration<2.1×1013/cm3 |
| Ion Implantation Layer | Customer Supply |
| Silicon Substrate | Silicon Substrate1: 4" FZ Si Wafer N type (100) Thickness 500±15μm Resistivity>2000Ωcm DSP Double Side Polished Silicon Substrate2: 4" Si Wafer N Type (100), As(Arsenic) Doped, Thickness 250±25μm, Resistivity 0.001-0.005Ωcm DSP Double Side Polished |
| Silicon Epitaxial Wafer Uniformity: Phosphorus Doped Layer: Thickness Uniformity＜4%, Resistivity Uniformity＜4% Instrinct Silicon Layer: Thickness Uniformity＜4%, Resistivity Uniformity Around 10% | |
What is silicon epi wafer?
Epitaxy is a process in which an additional monocrystalline silicon layer is deposited on to the polished crystal surface of a silicon wafer. This process makes it possible to select the material properties independently of the polished substrate, and consequently to create wafers that have different properties in the substrate and the epitaxial layer. In many cases this is necessary for the semiconductor component’s function.
PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.
