Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A |
P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A |
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units | |
| N-channel | P-channel | |||
| VDS | Drain-Source Voltage | 35 | -35 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID@TA=25℃ | Continuous Drain Current3 | 7 | -6.1 | A |
| ID@TA=70℃ | Continuous Drain Current3 | 5.7 | -5 | A |
| IDM | Pulsed Drain Current1 | 30 | -30 | A |
| PD@TA=25℃ | Total Power Dissipation | 2.0 | W | |
| Linear Derating Factor | 0.016 | W/℃ | ||
| TSTG | Storage Temperature Range | -55 to 150 | ℃ | |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ | |
Package Outline : DIP-8
Part Marking Information & Packing : DIP-8
Stock Offer (Hot sell)
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