Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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CSD18540Q5B Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET
1 Features
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
2 Applications
DC-DC Conversion
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
3 Description
This 1.8-mΩ, 60-V NexFETTM power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 41 | nC | |
Qgd | Gate Charge Gate-to-Drain | 6.7 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 2.6 | mΩ |
VGS =10V | 1.8 | |||
VGS(th) | Threshold Voltage | 1.9 | V | |
Device Information
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
CSD18540Q5B | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package | Tape and Reel |
CSD18540Q5BT | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 205 | ||
Continuous Drain Current(1) | 29 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 400 | A |
PD | Power Dissipation(1) | 3.8 | W |
Power Dissipation, TC = 25°C | 188 | ||
TJ, Tstg | Operating Junction, Storage Temperature | –55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID =80A,L=0.1mH,RG =25Ω | 320 | mJ |
