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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET
General Description Features
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Extended VGSS range (–25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3) • High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• TerminationisLead-freeandRoHSCompliant
