Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Feature:
• Floating channel designed for bootstrap operation Fully
operational to +500V or +600V Tolerant to negative transient
voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible Separate logic supply range from 3.3V to
20V Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
Series item:
VOFFSET (IR2110) 500V max.
(IR2113) 600V max.
ORDER INFORMATION
14-Lead PDIP IR2110 order IR2110PbF
14-Lead PDIP IR2113 order IR2113PbF
16-Lead SOIC IR2110S order IR2110SPbF
16-Lead SOIC IR2113S order IR2113SPbF
