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S3J 600 Voltage General Purpose Rectifier Diode For Electronic Products

Guangdong Huixin Electronics Technology Co., Ltd.
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Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

Contact name:Marissa Wang

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Guangdong Huixin Electronics Technology Co., Ltd.

S3J 600 Voltage General Purpose Rectifier Diode For Electronic Products

Country/Region china
City & Province dongguan guangdong
Categories Switching Power Supply
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Product Details

 

S3J 600 Voltage Purpose Rectifier Diodes For Electronic Products

 

S3A~S3M SMB Datasheet.pdf

 

 

Features: 

    
  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Idea for printed circuit board
  • For surface mounted applications
  • Glass passivated Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed

 

 

 

Mechanical Data:

 

 

  • Case : JEDEC DO-214AA Molded plastic body over passivated chip 
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Color band denotes cathode end
  • Mounting Position : Any
  • Weight : 0.003 ounce, 0.093 grams

 

 

Maximum Ratings And Electrical Characteristics:

 

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 

Parameter

 

SYMBOLS

 

S3AS3BS3DS3GS3JS3KS3MUNITS
Maximum Repetitive Peak Reverse Voltage

 

VRRM

 

501002004006008001000Volts
Maximum RMS Voltage

 

VRMS

 

3570140280420560700Volts
Maximum DC Blocking Voltage

 

VDC

 

501002004006008001000Volts
Maximum Average Forward Rectifier Current at TL=75°CIF(AV)

 

3

 

Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated loadIFSM

 

100

 

Amps
Maximum Instantaneous Forward Voltage at 3AVF

 

1.15

 

Volts
Maximum DC Reverse Current at rated DC blocking voltageTA=25°CIR

 

10

 

μA
TA=125°C

 

100

 

 


 

Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

 

 

 

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