Home Companies Shanghai GaNova Electronic Information Co., Ltd.

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

Shanghai GaNova Electronic Information Co., Ltd.

Contact Us

[China] country

Trade Verify

Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai

Contact name:Xiwen Bai (Ciel)

Inquir Now

Shanghai GaNova Electronic Information Co., Ltd.

Verified Suppliers
  • Trust
    Seal
  • Verified
    Supplier
  • Credit
    Check
  • Capability
    Assessment

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

Country/Region china
City & Province shanghai shanghai
Categories Pressure Measuring Instruments
InquireNow

Product Details

JDCD03-001-003

 

Overview

A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness.
 

 

 

Property

P-MOS GradeP-SBD GradeD Grade
Crystal Form4H
PolytypeNone PermittedArea≤5%
(MPD) a≤0.2 /cm2≤0.5 /cm2≤5 /cm2
Hex PlatesNone PermittedArea≤5%
Hexagonal PolycrystalNone Permitted
Inclusions aArea≤0.05%Area≤0.05%N/A
Resistivity0.015Ω•cm—0.025Ω•cm0.015Ω•cm—0.025Ω•cm0.014Ω•cm—0.028Ω•cm
(EPD)a≤4000/cm2≤8000/cm2N/A
(TED)a≤3000/cm2≤6000/cm2N/A
(BPD)a≤1000/cm2≤2000/cm2N/A
(TSD)a≤600/cm2≤1000/cm2N/A
Stacking Fault≤0.5% Area≤1% AreaN/A

 

Surface Metal Contamination

 

(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2

Diameter150.0 mm +0mm/-0.2mm
Surface OrientationOff-Axis:4°toward <11-20>±0.5 °
Primary Flat Length47.5 mm ± 1.5 mm
Secondary Flat LengthNo Secondary Flat
Primary Flat OrientationParallel to<11-20>±1°
Secondary Flat OrientationN/A
Orthogonal Misorientation±5.0°
Surface FinishC-Face:Optical Polish,Si-Face:CMP
Wafer EdgeBeveling

Surface Roughness

(10μm×10μm)

Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm
Thickness a350.0μm± 25.0 μm
LTV(10mm×10mm)a≤2μm≤3μm
(TTV)a≤6μm≤10μm
(BOW) a≤15μm≤25μm≤40μm
(Warp) a≤25μm≤40μm≤60μm
Chips/IndentsNone Permitted ≥0.5mm Width and DepthQty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter

TUA(2mm*2mm)≥98%≥95%N/A
CracksNone Permitted
ContaminationNone Permitted
PropertyP-MOS GradeP-SBD GradeD Grade
Edge Exclusion3mm

Remark: 3mm edge exclusion is used for the items marked with a.

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Hot Products

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° JDCD03-001-003 ...
6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for ...
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ...
6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and ...
JDCD03-001-003 Overview A SiC wafer is a semiconductor material that has excellent electrical and ...
P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.0±25.0μm MPD≤0.5/cm2 Resistivity≥1E9Ω·cm ...