Results forepi ready waferfrom 241 Products.
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semiconductor sapphire wafer by customized speical orientation 1°2°3°8°off C-axis 2inch dia 50.8mm size for epi-reday test How About The Advantagement For Sapphire Common Lens ...
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Epi polished Optical grade crystla quartz Wafers for DUV-photolithography Laser Optics Optical grade crystal quartz is used for production of high-power laser optics and precision ...
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(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in ...
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2inch /3inch 4inch /5inch/6inch C-axis/a axis/ r axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness2inch 4inch customized A axis sapphire ...
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Gadolinium Gallium Garnet GGG Substrates EPI Polish For YIG Gadolinium Gallium Garnet is a crystalline garnet (mixed oxide) material with numerous optical applications in addition ...
china
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SS304 Knife Gate Valve Wafer Handwheel Knife Gate Valve DN150 PN10 PN16 Advantage: 1. OEM Factory : Professional manufacturer, clients from whole world. 2. High Quality, Competitiv...
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4 inch GaN-on-Si epi wafer manufacturer Power HEMT Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate ...
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P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical ...
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2’’ InSb-Te EPI Substrates Narrow Band Gap Semiconductor Substrates Hall Components Description of InSb-Te: Indium antimonide (InSb), as a kind of group ⅲ-V binary compound ...
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter ...
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GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi...
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50.8±0.2mm 2inch GaAs (100) Undoped Substrates 7±1mm IF Length Overview With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingl...
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter ...
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray ...
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17±1mm OF Length 2inch GaAs (100) Undoped Substrates 50.8±0.2mm Overview The conversion efficiency of a high-efficiency solar-cell panel based on GaAs is up to 40%. At present, ...
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in ...
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P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...
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2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, ...
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