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RM14 High-Frequency Transformer Manufacturer Customized DW3256

Shenzhen Dowis Electronics Co.,Ltd
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Address: B Blding,Huangpu Runhe Industrial Park, Zhentou Road,Huangpu Community, Shajing street, Bao'An District Shenzhen P.R.C

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Shenzhen Dowis Electronics Co.,Ltd

RM14 High-Frequency Transformer Manufacturer Customized DW3256

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City & Province shenzhen
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Product Details

RM14 High-Frequency Transformer Manufacturer Customized DW3256

Shenzhen Dowis Electronics Co., Ltd. is a professional manufacturer of electronic transformers, inductors, and filters integrating R&D, production, and sales. It is a national high-tech enterprise and has passed the IATF16949:2016 automotive industry quality management system certification, the product has passed the "UL""CQC" and other safety certifications. The products are widely used in communication equipment, new energy vehicles, industrial control equipment, high-power LED drives and other market areas. The industry has high visibility. In addition to the domestic market, but also exported to many countries in Europe and the United States.

 

In order to further expand production capacity, it has set up a special test area construction area in zhaoqing YueGui cooperation in 2018 of 14000 square meters of manufacturing center named ZhaoQing Sheng Xiang electronic technology co., Ltd. Its management technical team has rich experience in cooperating with customers from well-known domestic enterprises and overseas. The design of products can fully follow customer’s needs and services with a good quality control system, and it has been recognized by many famous enterprises as the core suppliers. We look forward to cooperating with you.
 

1. Drawing (Unit: mm)



2. Environmental Conditions

  • Storage temperature: -40--85℃
  • Ambient temperature: -25 -- 65℃
  • Operating temperature:130℃ MAX
  • Relative humidity: 5%-95%
  • Long-term durability test.



3. Electrical Characteristics

  • Inductance Value:LN1=1.46—2.5mH(at:1KHz,0.3V;25℃);
  • Q Value:N1≥10(at:100KHz,0.3V);
  • Leakage Value(LEAKAGE INDUCTANCE):LLN1≤3µH(at:1KHz,0.3V);
  • Resistance Strength

N1———————N2A,N2B,N3 @ 3750Vac/1mA/1min

N1———————Core @ 1834Vac/1mA/1min

N2A,N2B,N3———Core @ 1834Vac/1mA/1min

  • Winding Resistance(25℃):

         N1:≤0.6Ω N2A:≤10mΩ N2B:≤10mΩ N3:≤100mΩ

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