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BSP170PH6327XTSA1 High Power MOSFET P CH 60V 1.9A Automotive 4 Pin SOT-223 T/R

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Sunbeam Electronics (Hong Kong) Limited

BSP170PH6327XTSA1 High Power MOSFET P CH 60V 1.9A Automotive 4 Pin SOT-223 T/R

Country/Region china
City & Province shenzhen
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Product Details

BSP170PH6327XTSA1 Infineon Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

Product Technical Specifications

EU RoHSCompliant
ECCN (US)EAR99
Part StatusActive
AutomotiveYes
PPAPUnknown
Product CategorySmall Signal
ConfigurationSingle Dual Drain
Process TechnologySIPMOS
Channel ModeEnhancement
Channel TypeP
Number of Elements per Chip1
Maximum Drain Source Voltage (V)60
Maximum Gate Source Voltage (V)±20
Maximum Gate Threshold Voltage (V)4
Maximum Continuous Drain Current (A)1.9
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)1
Maximum Drain Source Resistance (mOhm)300@10V
Typical Gate Charge @ Vgs (nC)10@10V
Typical Gate Charge @ 10V (nC)10
Typical Input Capacitance @ Vds (pF)328@25V
Maximum Power Dissipation (mW)1800
Typical Fall Time (ns)60
Typical Rise Time (ns)28
Typical Turn-Off Delay Time (ns)92
Typical Turn-On Delay Time (ns)14
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Supplier Temperature GradeAutomotive
PackagingTape and Reel
Supplier PackageSOT-223
Pin Count4
Standard Package NameSOT
MountingSurface Mount
Package Height1.6
Package Length6.5
Package Width3.5
PCB changed3
TabTab
Lead ShapeGull-wing

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