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TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA

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Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China

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Sunbeam Electronics (Hong Kong) Limited

TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA

Country/Region china
City & Province shenzhen
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Product Details

TC58NYG0S3HBAI6 Toshiba NAND Flash Parallel 1.8V 1G-bit 128M x 8 67-Pin VFBGA

Product Technical Specifications

EU RoHSCompliant
ECCN (US)3A991.b.1.a
Part StatusActive
AutomotiveUnknown
PPAPUnknown
Cell TypeNAND
Chip Density (bit)1G
ArchitectureSectored
Boot BlockNo
Block OrganizationSymmetrical
Address Bus Width (bit)28
Sector Size128Kbyte x 1024
Page Size2Kbyte
Number of Bits/Word (bit)8
Number of Words128M
ProgrammabilityYes
Timing TypeAsynchronous
Maximum Erase Time (S)0.01/Block
Maximum Programming Time (ms)0.7
Process TechnologyCMOS
Interface TypeParallel
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Maximum Operating Supply Voltage (V)1.95
Programming Voltage (V)1.7 to 1.95
Operating Current (mA)30
Program Current (mA)30
Minimum Operating Temperature (°C)-40
Maximum Operating Temperature (°C)85
Command CompatibleNo
ECC SupportYes
Support of Page ModeNo
Supplier PackageVFBGA
Pin Count67
MountingSurface Mount
Package Height0.7(Max)
Package Length8
Package Width6.5
PCB changed67

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