Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| SAFEA2G59MA0F00R14 | 6588 | MURATA | 14+ | SMD |
| SAK-C167CS-LMCA | 2470 | 16+ | QFP | |
| SAM2695 | 1959 | DREAM | 15+ | QFN |
| SB260-E3 | 25000 | VISHAY | 13+ | DO-15 |
| SB360-E3/54 | 12000 | VISHAY | 16+ | DO-201AD |
| SB560-E3/73 | 170000 | VISHAY | 16+ | DO-201AD |
| SBR10E45P5-13 | 96000 | DIODES | 14+ | POWERDI5 |
| SC1527 | 42000 | SC | 14+ | SOP-8 |
| SC1S311 | 5444 | SANKEN | 13+ | SOP-8 |
| SC412AMLTRT | 7544 | SEMTECH | 13+ | QFN16 |
| SC4503TSKTRT | 7515 | SEMTECH | 15+ | SOT23-5 |
| SC5104 | 8597 | SL | 13+ | DIP-16 |
| SC8206A4L | 2715 | SL | 16+ | DIP-20 |
| SE1117-3.3 | 37000 | SE | 15+ | SOT-223 |
| SE521F | 5019 | PHILIPS | 15+ | CDIP-14 |
| SEM2106 | 7486 | SEM | 16+ | SOP-24 |
| SEP8506-003 | 6659 | HONEYWELL | 12+ | DIP-2 |
| SFH229 | 6675 | OSRAM | 12+ | DIP-2 |
| SFH250 | 6301 | OSRAM | 16+ | DIP-2 |
| SFH250V | 3197 | 14+ | DIP-4 | |
| SFH6106-3 | 66000 | VISHAY | 15+ | SOP-4 |
| SFH6206-2T | 21000 | VISHAY | 05+ | SOP-4 |
| SFH756V | 4402 | 16+ | DIP-4 | |
| SFSRA5M50DF00-BO | 12142 | MURATA | 13+ | DIP-3 |
| SFSRA6M50DF00-BO | 12213 | MURATA | 15+ | DIP-3 |
| SG3525AP013TR | 4789 | ST | 16+ | SOP-16 |
| SG3526DW | 10130 | LINFINITY | 14+ | SOP-18 |
| SGL160N60UFDTU | 2743 | FAIRCHILD | 16+ | TO-264 |
| SHT21 | 2891 | SENESIRON | 13+ | DFN-6 |
| SHT-71 | 1282 | SENESIRON | 16+ | SIP-4 |
2SK1402, 2SK1402A
Silicon N-Channel MOSFET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings (Ta = 25°C)
| Item | Symbol | Ratings | Unit | |
| Drain to source voltage | 2SK1402 | VDSS | 600 | V |
| 2SK1402A | 650 | |||
| Gate to source voltage | VGSS | ±30 | V | |
| Drain current | ID | 4 | A | |
| Drain peak current | ID(pulse)*1 | 16 | A | |
| Body to drain diode reverse drain current | IDR | 4 | A | |
| Channel dissipation | Pch*2 | 50 | W | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | –55 to +150 | °C | |
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Outline
