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2SK2382 Power Mosfet Transistor Switching Regulator , DC−DC Converter

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Anterwell Technology Ltd.

2SK2382 Power Mosfet Transistor Switching Regulator , DC−DC Converter

Country/Region china
City & Province shenzhen guangdong
Categories Switching Power Supply
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Product Details

 

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2382

Switching Regulator, DC−DC Converter and Motor Drive Applications

 

Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.)

High forward transfer admittance : |Yfs| = 17 S (typ.)

Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)

Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Drain−source voltageVDSS200V
Drain−gate voltage (RGS = 20 kΩ)VDGR200V
Gate−source voltageVGSS±20V
Drain currentDC (Note 1)ID15A
Pulse (Note 1)IDP45A
Drain power dissipation (Tc = 25°C)PD45W
Single pulse avalanche energy (Note 2)EAS166mJ
Avalanche currentIAR15A
Repetitive avalanche energy (Note 3)EAR4.5mJ
Channel temperatureTch150°C
Storage temperature rangeTstg−55 to 150°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

 

 

 

 

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