Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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MMBFJ177LT1G intergrated Circuit Chip JFET Chopper P−Channel − Depletion
Features • Pb−Free Package is Available
MAXIMUM RATINGS
| Rating | Symbol | Value | Unit |
| Drain−Gate Voltage | VDG | 25 | Vdc |
| Reverse Gate−Source Voltage | VGS(r) | -25 | Vdc |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C | PD | 225 1.8 | mW mW/°C |
Thermal Resistance, Junction−to−Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
ORDERING INFORMATION
| Device | Package | Shipping† |
| MMBFJ177LT1 | SOT−23 | 3000 Tape & Reel |
| MMBFJ177LT1G | SOT−23 | 3000 Tape & Reel |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
| Characteristic | Symbol | Min | Max | Unit |
OFF CHARACTERISTICS
| Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 Adc) | V(BR)GSS | 30 | - | Vdc |
| Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) | IGSS | - | 1.0 | nAdc |
| Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) | VGS(off) | 0.8 | 2.5 | Vdc |
ON CHARACTERISTICS
| Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2) | IDSS | 1.5 | 20 | mAdc | |
| Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) | ID(off) | - | 1.0 | nAdc | |
| Drain Source On Resistance (ID = 500 Adc) | rDS(on) | - | 300 | Ω | |
| Input Capacitance | VDS = 0, VGS = 10 Vdc f = 1.0 MHz | Ciss | - | 11 | pF |
| Reverse Transfer Capacitance | Crss | - | 5.5 | ||
2. Pulse Test: Pulse Width < 300 s, Duty Cycle ≤ 2%.
PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AN
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