TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP251F

Inverter for Air Conditioner

Induction Heating

Transistor Inverter

Power MOSFET Gate Drive

IGBT Gate Drive

The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector.

This unit is 8−lead DIP package.

TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A)

• Input threshold current: IF = 5mA (max.)

• Supply current: 11mA (max.)

• Supply voltage: 10~35V

• Output peak current: ±0.4A (max.)

• Switching time: tpHL, tpLH = 1μs (max.)

• Isolation voltage: 2500Vrms(min.)

• UL recognized: UL1577, file no. E67349

• Option (D4) type VDE approved:

  DIN EN 60747-5-2, certificate no. 40011913

  Maximum operating insulation voltage: 1140VPK

  Highest permissible over voltage: 6000VPK

(Note 1) When a EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”

• Structural parameter

  Creepage distance: 8.0mm (min.)

  Clearance: 8.0mm (min.)

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