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STP20NM50FP npn darlington power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

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Anterwell Technology Ltd.

STP20NM50FP npn darlington power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

Country/Region china
City & Province shenzhen guangdong
InquireNow

Product Details

 
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
 
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK
Zener-Protected SuperMESH™ MOSFET
 
General features

TypeVDSS(@Tj max)RDS(on)ID

STB20NM50

STB20NM50-1

STP20NM50

STP20NM50FP

550 V

550 V

550 V

550 V

<0.25 Ω

<0.25 Ω

<0.25 Ω

<0.25 Ω

20 A

20 A

20 A

20 A

■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
 
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.
 
Applications
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.
 
Absolute maximum ratings

SymbolParameterValueUnit
  TO-220/D²PAK/I²PAKTO-220FP 
VGSGate-Source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C2020 (Note 3)A
IDDrain Current (continuous) at TC = 100°C12.612.6 (Note 3)A
IDM Note 2Drain Current (pulsed)8080 (Note 3)A
PTOTTotal Dissipation at TC = 25°C19245W
 Derating Factor1.20.36W/°C
dv/dt Note 1Peak Diode Recovery voltage slope15V/ns
VISOInsulation Withstand Volatge (DC)-2000V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150°C

 
Package

 
Internal schematic diagram

 
 
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