Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET
General Features
| TYPE | VDSS | RDS(on) | ID |
STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 | 600 V 600 V 600 V 600 V 600 V | < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω | 20 A 20 A 20 A 20 A 20 A |
■ TYPICAL RDS(on) = 0.25 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
TO-220/D²PAK/ I²PAK/TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 20 | 20 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 12.6 | 12.6 (*) | A |
| IDM (•) | Drain Current (pulsed) | 80 | 80 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 192 | 45 | W |
| Derating Factor | 1.2 | 0.36 | W/°C | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Winthstand Voltage (DC) | - | 2500 | V |
| Tstg | Storage Temperature | -65 to 150 | °C | |
| Tj | Max. Operating Junction Temperature | 150 | °C | |
(•) Pulse width limited by safe operating area
(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
Package
Internal Schematic Diagram
Stock Offer (Hot Sell)
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